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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG200Q1US51 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1500 W; Maximum Collector Current (IC): 300 A; No. of Terminals: 4; |
| Datasheet | MG200Q1US51 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 300 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | MOTOR CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 1500 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 1500 W |
| Maximum Fall Time (tf): | 300 ns |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | HIGH SPEED |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 3.6 V |
