32 A Insulated Gate Bipolar Transistors (IGBT) 36

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH32N170A	Littelfuse	N-CHANNEL	SINGLE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	107 ns
IXDP20N60BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGH16N170	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	1100 ns	1600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA	e3	10	260	90 ns
IXGT16N170	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	90 ns
TIG111GMH	Onsemi	N-CHANNEL		NO	55 W	32 A												Insulated Gate BIP Transistors	150 Cel		600 V			30 V		6 V
SGH20N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	195 W	32 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	400 ns	363 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	475 ns	8.5 V		SINGLE	R-PSFM-T3				RC-IGBT					81 ns
SGH20N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		363 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			81 ns
FGD3050G2V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	500 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3	30	260	2500 ns	AEC-Q101
FGD3050G2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	2500 ns
FGD3050G2_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	32 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.2 V	GULL WING	RECTANGULAR	1	15000 ns	6800 ns	2	SMALL OUTLINE		175 Cel	SILICON	495 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2500 ns
BUP313	Infineon Technologies	N-CHANNEL	SINGLE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		470 ns	3	FLANGE MOUNT			SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-218AB	e3			115 ns
IRGS4620DPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
BUP313D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	32 A	PLASTIC/EPOXY	MOTOR CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	95 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-218	e3			70 ns
BSM20GD60DLCE3224	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	125 W	32 A	UNSPECIFIED			2.45 V	UNSPECIFIED	RECTANGULAR	6		146 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X17		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	71 ns
IRGS4620DTRLPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
BUP213	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	32 A	PLASTIC/EPOXY	MOTOR CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	95 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-220AB	e3			70 ns
IRGS4620DTRRPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V	MATTE TIN OVER NICKEL			1					e3
BSM20GD60DLCE3224BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		32 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	6		146 ns	17	FLANGE MOUNT		150 Cel	SILICON	600 V							UPPER	R-XUFM-X17		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	71 ns
SIGC25T120CX1SA3	Infineon Technologies	N-CHANNEL	SINGLE	YES		32 A	UNSPECIFIED				NO LEAD	RECTANGULAR	1		470 ns	3	UNCASED CHIP		150 Cel	SILICON	1200 V							UPPER	R-XUUC-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
SIGC25T120C	Infineon Technologies	N-CHANNEL	SINGLE	YES		32 A	UNSPECIFIED				NO LEAD	RECTANGULAR	1		470 ns	3	UNCASED CHIP	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V		UPPER	R-XUUC-N3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
SIGC25T120CX1SA4	Infineon Technologies	N-CHANNEL	SINGLE	YES		32 A	UNSPECIFIED				NO LEAD	RECTANGULAR	1		470 ns	3	UNCASED CHIP			SILICON	1200 V							UPPER	R-XUUC-N3									100 ns
IRGB4620DPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V										NOT SPECIFIED	NOT SPECIFIED
IRGP4620DPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V										NOT SPECIFIED	NOT SPECIFIED
IRGP4620D-EPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V			20 V		6.5 V										NOT SPECIFIED	NOT SPECIFIED
IXLT19N250A	Littelfuse	N-CHANNEL	SINGLE	YES		32 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		825 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V						PURE TIN	SINGLE	R-PSSO-G2		ISOLATED	Not Qualified		TO-268AA				145 ns
IXLF19N220A	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		650 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2200 V			20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			300 ns
IXA20RG1200DHGLB-TRR	Littelfuse	N-CHANNEL		YES	125 W	32 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V
IXLV19N250AS	Littelfuse	N-CHANNEL	SINGLE	YES		32 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		830 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V							SINGLE	R-PSSO-G2		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	140 ns
IXDP20N60B	Littelfuse	N-CHANNEL	SINGLE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55 ns
MBPW16-06S6	Littelfuse	N-CHANNEL	COMPLEX	NO		32 A	UNSPECIFIED	POWER CONTROL			PIN/PEG	RECTANGULAR	7		290 ns	25	FLANGE MOUNT		150 Cel	SILICON	600 V							UPPER	R-XUFM-P25		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	60 ns
IXA20PG1200DHGLB	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	130 W	32 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	2		350 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			Nickel (39) Tin (984)	DUAL	R-PDSO-G9		ISOLATED		HIGH RELIABILITY					110 ns	UL RECOGNIZED
IXYP10N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	32 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		263 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				54 ns
IXGX32N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		362 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V						TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			74 ns
IXGT32N170A	Littelfuse	N-CHANNEL	SINGLE	YES		32 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		370 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V						MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	107 ns
SGL20N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264				40 ns
SGP20N60RUF	Samsung	N-CHANNEL	SINGLE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V							SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.