Onsemi - TIG111GMH

TIG111GMH by Onsemi

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Manufacturer	Onsemi
Manufacturer's Part Number	TIG111GMH
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 32 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 30 V;
Datasheet	TIG111GMH Datasheet
In Stock	926

TIG111GMH Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	32 A
Maximum Power Dissipation (Abs):	55 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Threshold Voltage:	6 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
926	-	-

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