40 A Insulated Gate Bipolar Transistors (IGBT) 374

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGP20N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V	1400 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				60 ns
IXGA20N100A3	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	GULL WING	RECTANGULAR	1		1630 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V	-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	162 ns
IXBH40N160A	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		300 W	150 Cel	SILICON	1600 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH VOLTAGE BIMOSFET	TO-247AD	e3	10	260
IXGP20N30	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT				SILICON						PURE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
IXGP20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				162 ns
IXGM20N50	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N100	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		1000 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N80	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N50A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N80A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
MG1225H-XBN2MM	Littelfuse	N-CHANNEL	COMPLEX	NO		40 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	7		610 ns	24	FLANGE MOUNT			125 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X24		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	140 ns
IXGA16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		190 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB				43 ns
IXGP16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB				43 ns
IXGA16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB				43 ns
IXGT28N60D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		40 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1			2	SMALL OUTLINE				SILICON						PURE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-268AA
IXGH20N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	450 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH20N90A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N50U1	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N120B	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			43 ns
IXGH28N60D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT				SILICON						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3	10	260
IXGH20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	162 ns
IXYH20N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	278 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.4 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXBT16N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	GULL WING	RECTANGULAR	1		940 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	220 ns
IXGH20N90	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		900 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXYH16N170C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				35 ns
IXGH20N50	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N80	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V	1400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXGT20N120B	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		630 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	43 ns
IXGH20N120	Littelfuse	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		1250 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260	57 ns
IXGT20N100	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	700 ns	700 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	30 ns
IXGH20N80A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N50A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V		30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT20N120	Littelfuse	N-CHANNEL	SINGLE	YES		40 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		1250 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268	e3	10	260	57 ns
IXGH16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			43 ns
SGP40N60UF	Samsung	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	118 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		7.5 V		SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				32 ns
SGL40N150D	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		680 ns	3	FLANGE MOUNT			150 Cel	SILICON	1500 V						SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264				1300 ns
SGL40N150	Samsung	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		500 ns	3	FLANGE MOUNT			150 Cel	SILICON	1500 V						SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-264				700 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.