40 A Insulated Gate Bipolar Transistors (IGBT) 374

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4BC40WLPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

294 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-262

e3

48 ns

SGW20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

66 ns

IXGA20N120A3

Littelfuse

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

e3

10

260

66 ns

STGWT20H65FB

STMicroelectronics

N-CHANNEL

NO

168 W

40 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

HGTG20N60B3D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

45 ns

IXGA20N120A3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1530 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AA

66 ns

GT40WR21,Q(O

Toshiba

N-CHANNEL

NO

375 W

40 A

350 ns

Insulated Gate BIP Transistors

175 Cel

1800 V

25 V

IKW20N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

36 ns

IHW20N135R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IRG4BC40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

NGTB20N120IHRWG

Onsemi

N-CHANNEL

NO

384 W

40 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

FP25R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

IRG4PC40UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

330 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

92 ns

FP25R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

IKP20N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

36 ns

FPF2C110BI07AS2

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

40 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

152 ns

30

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.1 V

UPPER

R-XUFM-X30

ISOLATED

49 ns

STGP20V60DF

STMicroelectronics

N-CHANNEL

NO

40 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

IRGB20B60PD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

40 A

PLASTIC/EPOXY

POWER CONTROL

8 ns

THROUGH-HOLE

RECTANGULAR

1

17 ns

138 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

25 ns

FGAF40N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

100 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

67 ns

IRGP20B60PDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

40 A

PLASTIC/EPOXY

POWER CONTROL

8 ns

THROUGH-HOLE

RECTANGULAR

1

17 ns

138 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

e3

25 ns

FGB20N60SFD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

40 A

PLASTIC/EPOXY

POWER CONTROL

21 ns

GULL WING

RECTANGULAR

1

43 ns

123 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

28 ns

AEC-Q101

FGB20N60SFD_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

123 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

260

28 ns

AEC-Q101

FS25R12YT3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

AIKW20N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

36 ns

AEC-Q101

IRG4PC40WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

294 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

48 ns

SK35GD126ET

Semikron International

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

520 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

115 ns

IEC-60747-1; UL RECOGNIZED

FPF2G120BF07ASP

Onsemi

N-CHANNEL

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

156 W

40 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

3

165 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.8 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

FS25R12KE3GBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FS25R12YT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

165 W

40 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X22

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRG4PC40UD-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

330 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

IKB20N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

299 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

36 ns

AIKP20N60CTAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

287 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220

e3

35 ns

AEC-Q101

FGH20N60SFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

48 ns

123 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

28 ns

IGB20N60H3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

31 ns

IHW20N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

38 ns

SGW20N60XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

313 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

66 ns

STGF20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

26 ns

STGW20H65FB

STMicroelectronics

N-CHANNEL

NO

168 W

40 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGW20IH125DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

SILICON

1250 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

FGA20S120M

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

865 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

301 ns

FS25R12KT3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

IHW20N120R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

40 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

526 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IHW20N120R3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

538 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IHW20T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

82 ns

IKP20N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

31 ns

IRG4BC40WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

174 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

IXBF32N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

795 ns

3

IN-LINE

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

573 ns

IXEL40N400

Littelfuse

N-CHANNEL

SINGLE

NO

380 W

40 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1170 ns

3

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

4000 V

20 V

7 V

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

260 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.