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| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | IXBF32N300 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1; |
| Datasheet | IXBF32N300 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 40 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 5 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 795 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 160 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 573 ns |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 3000 V |
| Additional Features: | LOW CONDUCTION LOSS |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 3.2 V |
