48 A Insulated Gate Bipolar Transistors (IGBT) 45

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGB4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

IXGH48N60A3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

925 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

54 ns

AUIRGP4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

64 ns

IXSH24N60A

IXYS Corporation

N-CHANNEL

SINGLE

NO

150 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e1

300 ns

IXSH24N60AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247

NOT SPECIFIED

NOT SPECIFIED

300 ns

RGT50NS65DGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

210 ns

2

SMALL OUTLINE

SILICON

650 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

e3

65 ns

IRGP4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

64 ns

IXGH48N60B3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

47 ns

SGH30N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

341 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

490 ns

8.5 V

SINGLE

R-PSFM-T3

101 ns

SGH30N60RUFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

341 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

101 ns

AFGHL25T120RLD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.1 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

43.2 ns

AEC-Q101

AFGHL40T120RLD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

529 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

276 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

80 ns

AEC-Q101

AFGHL25T120RHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

261 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

219 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

43 ns

AEC-Q101

NXH50M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

86 W

48 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

130 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

39 ns

AFGHL40T120RHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

66 ns

AEC-Q101

IRGS4062DTRL

Infineon Technologies

N-Channel

YES

48 A

PLASTIC/EPOXY

1.95 V

GULL WING

RECTANGULAR

164 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

64 ns

IRGS4062DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

64 ns

IRGS4062DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

64 ns

IRGSL4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262AA

e3

30

260

64 ns

IRGS4062DTRR

Infineon Technologies

N-Channel

YES

48 A

PLASTIC/EPOXY

1.95 V

GULL WING

RECTANGULAR

164 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

64 ns

F4-30R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

165 W

48 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

4

355 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

IRGS4062DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

64 ns

AUIRGP4062D-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

64 ns

IRGP4062D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.95 V

THROUGH-HOLE

RECTANGULAR

1

41 ns

133 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

63 ns

AUIRGC4063B

Infineon Technologies

N-CHANNEL

YES

48 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

IRGP4062-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.95 V

THROUGH-HOLE

RECTANGULAR

1

41 ns

133 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

63 ns

IRGP4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

164 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

64 ns

IRGB4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

164 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

AUIRGB4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

THROUGH-HOLE

RECTANGULAR

1

41 ns

164 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

64 ns

IXGR24N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

54 ns

IXST30N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

436 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-268AA

e3

80 ns

IXGA24N120C3

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

51 ns

IXGA48N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

200 ns

246 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

47 ns

IXGP48N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

47 ns

IXGP24N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

51 ns

IXGT24N60B

Littelfuse

N-CHANNEL

SINGLE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

SILICON

600 V

PURE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-268AA

IXGH48N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

47 ns

IXGH24N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

51 ns

IXGH9090

Littelfuse

N-CHANNEL

NO

150 W

48 A

400 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.5 V

Tin/Lead (Sn/Pb)

e0

IXGH30N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

60 ns

IXGT24N60C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

110 ns

130 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

FAST SWITCHING

TO-268AA

e3

10

260

15 ns

IXGH24N50BU1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

25 ns

IXGH24N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

51 ns

SGL30N60RUFD

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

TO-264

44 ns

SGH30N60RUF

Samsung

N-CHANNEL

SINGLE

NO

48 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED SWITCHING

44 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.