IXYS Corporation - IXSH24N60A

IXSH24N60A by IXYS Corporation

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Manufacturer IXYS Corporation
Manufacturer's Part Number IXSH24N60A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; JESD-30 Code: R-PSFM-T3;
Datasheet IXSH24N60A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 48 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Nominal Turn Off Time (toff): 925 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 300 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 150 W
Maximum Fall Time (tf): 500 ns
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: HIGH SPEED
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.7 V
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