51 A Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRG4PF50WPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	220 ns	370 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			54 ns
IRG4PF50WDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		460 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			121 ns
ISL9V5045S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
ISL9V5045S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
ISL9V5045S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
ISL9V5045S3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	480 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-263AB	e3	30	260	2800 ns	AEC-Q101
SP001533582	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	260 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V		-55 Cel	20 V	390 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AC				55 ns
IRG4PF50W	Infineon Technologies	N-CHANNEL	SINGLE	NO		51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	54 ns
IRG4PF50WD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		460 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC		NOT SPECIFIED	NOT SPECIFIED	121 ns
IRG4PF50W-E	Infineon Technologies	N-CHANNEL	SINGLE	NO		51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			SILICON	900 V						MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			54 ns
IXGT28N90B	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	220 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	65 ns
IXGH28N90B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	51 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	220 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	65 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.