ISL9V5045S3 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	ISL9V5045S3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 51 A; Package Style (Meter): IN-LINE;
Datasheet	ISL9V5045S3 Datasheet
In Stock	1,519

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	51 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	7000 ns
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Turn On Time (ton):	11000 ns
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	13600 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	300 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	2800 ns
Package Style (Meter):	IN-LINE
Maximum Turn Off Time (toff):	30000 ns
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	15000 ns
JEDEC-95 Code:	TO-262AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	445 V
Maximum Gate-Emitter Voltage:	12 V
Maximum VCEsat:	1.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,519	-	-

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