54 A Insulated Gate Bipolar Transistors (IGBT) 22

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
HGTG12N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3			33 ns
HGTG18N120BND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	54 A	PLASTIC/EPOXY	MOTOR CONTROL	22 ns		THROUGH-HOLE	RECTANGULAR	1	200 ns	345 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			38 ns
HGTG12N60A4D_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns
APT25GT120BRG	Microchip Technology	N-CHANNEL	SINGLE	NO		54 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V				TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AA	e1			41 ns
APT30GS60BRDQ2(G)	Microsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		54 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		412 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V				TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			45 ns
APT30GS60BRDQ2G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		54 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		412 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V				TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e1			45 ns
FP35R12U1T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	250 W	54 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified					260	43 ns
HGT1S12N60A4S9A	Onsemi	N-CHANNEL	SINGLE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
HGTP12N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			33 ns
HGTP12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				33 ns
HGT1S12N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	33 ns
HGT1S12N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
HGTG12N60A4	Onsemi	N-CHANNEL	SINGLE	NO	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	95 ns	180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	265 ns		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				33 ns
HGTG18N120BN	Onsemi	N-CHANNEL	SINGLE	NO		54 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		345 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, AVALANCHE RATED	TO-247	e3			38 ns
FP35R12W2T4_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	215 W	54 A	UNSPECIFIED			2.25 V	UNSPECIFIED	RECTANGULAR	7		510 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12W2T4PBPSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		54 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT		175 Cel	SILICON	1200 V					UPPER	R-XUFM-X23		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12W2T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	215 W	54 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12U1T4BPSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		54 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT		175 Cel	SILICON	1200 V					UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12W2T4BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		54 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT		175 Cel	SILICON	1200 V					UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12W2T4B11BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		54 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT			SILICON	1200 V					UPPER	R-XUFM-X23		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns
FP35R12W2T4PB11BPSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		54 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	7		510 ns	35	FLANGE MOUNT		150 Cel	SILICON	1200 V					UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns
IXGR35N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		54 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		780 ns	3	IN-LINE		150 Cel	SILICON	1200 V				TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	10	260	105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.