Onsemi - HGT1S12N60A4DS9A

HGT1S12N60A4DS9A by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HGT1S12N60A4DS9A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Terminal Position: SINGLE;
Datasheet HGT1S12N60A4DS9A Datasheet
In Stock2,355
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 54 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Surface Mount: YES
Nominal Turn Off Time (toff): 180 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 167 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 33 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 265 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 95 ns
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.7 V
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Pricing (USD)

Qty. Unit Price Ext. Price
2,355 - -

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