6.2 A Insulated Gate Bipolar Transistors (IGBT) 21

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
SKB02N120ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6.2 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		375 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V			TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	TO-263AB	e3			40 ns
SGB02N120ATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6.2 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		375 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V			TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	TO-263AB	e3			40 ns
SGD02N120BUMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		6.2 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		375 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V				SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified	TO-252AA				40 ns
SGP02N120XKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V			TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-220AB	e3			40 ns
SGP02N120XK	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT			SILICON	1200 V				SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	40 ns
SGD02N120	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns	GULL WING	RECTANGULAR	1	61 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified	TO-252AA	e3		260	40 ns
SKP02N120XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V			TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-220AB	e3			40 ns
SGI02N120HKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	IN-LINE			SILICON	1200 V				SINGLE	R-PSIP-T3		COLLECTOR		TO-262AA				40 ns
SGI02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns	THROUGH-HOLE	RECTANGULAR	1	61 ns	375 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V		SINGLE	R-PSIP-T3	NOT APPLICABLE	COLLECTOR	Not Qualified	TO-262AA		NOT SPECIFIED	NOT SPECIFIED	40 ns
SGI02N120XK	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	IN-LINE		150 Cel	SILICON	1200 V				SINGLE	R-PSIP-T3		COLLECTOR		TO-262AA				40 ns
SKP02N120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	12 ns	THROUGH-HOLE	RECTANGULAR	1	96 ns	375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-220AB	e3			40 ns
SGB02N120XT	Infineon Technologies	N-CHANNEL	SINGLE	YES		6.2 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		375 ns	2	SMALL OUTLINE			SILICON	1200 V				SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB		NOT SPECIFIED	NOT SPECIFIED	40 ns
SGI02N120XKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	IN-LINE		150 Cel	SILICON	1200 V				SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	TO-262AA		NOT SPECIFIED	NOT SPECIFIED	40 ns
SGW02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	35 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	21 ns	THROUGH-HOLE	RECTANGULAR	1	102 ns	375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-247AC	e3			40 ns
SKP02N120XK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT			SILICON	1200 V				SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	40 ns
SGB02N120	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns	GULL WING	RECTANGULAR	1	61 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	TO-263AB			245	40 ns
SP000683106	Infineon Technologies	N-CHANNEL	SINGLE	NO		6.2 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT			SILICON	1200 V				SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				40 ns
SKP02N120HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT			SILICON	1200 V				SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				40 ns
SGP02N120HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		6.2 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		375 ns	3	FLANGE MOUNT			SILICON	1200 V				SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				40 ns
SKB02N120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	12 ns	GULL WING	RECTANGULAR	1	96 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	TO-263AB	e3			40 ns
SGP02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns	THROUGH-HOLE	RECTANGULAR	1	61 ns	375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-220AB	e3			40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.