60 A Insulated Gate Bipolar Transistors (IGBT) 337

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXYT30N65C3H1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		120 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	59 ns
IXDT30N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e3	10	260	170 ns
IXRH50N60	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
MWI35-12T7T	Littelfuse	N-CHANNEL	COMPLEX	NO	200 W	60 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	7		700 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X28		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns	UL RECOGNIZED
IXRH50N100	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXRH50N80	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	800 V		20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXBH28N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		2260 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AD	e3	10	260	71 ns
MWI60-06G6K	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		60 A	UNSPECIFIED	MOTOR CONTROL		UNSPECIFIED	RECTANGULAR	6		210 ns	24	FLANGE MOUNT		125 Cel	SILICON	600 V						UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	40 ns	UL RECOGNIZED
IXGP30N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				53 ns
IXGA30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	37 ns
IXYP30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				59 ns
IXBH22N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		2025 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				406 ns
IXDT30N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	435 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e3	10	260	170 ns
IXGA30N60C3	Littelfuse	N-CHANNEL	SINGLE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	45 ns
IXGA30N60C3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	45 ns
IXGP30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				37 ns
IXGP30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXRH50N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXGX28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		915 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			66 ns
IXGK28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		915 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-264AA	e1			66 ns
IXXH30N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		292 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	57 ns
IXBT22N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		2025 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				406 ns
IXGH30N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	53 ns
IXGH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXBT28N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		60 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		2260 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA				71 ns
MIXA40W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	195 W	60 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified						110 ns	UL RECOGNIZED
IXBF42N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	240 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		950 ns	3	IN-LINE		150 Cel	SILICON	3000 V	-55 Cel	25 V		5 V		SINGLE	R-PSIP-T3		ISOLATED							652 ns
IXGH40N30A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	120 ns	370 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
IXXH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
IXGT30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	45 ns
IXGH40N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	220 ns	600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
IXYH30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	59 ns
IXBT24N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		1285 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	190 ns
IXGH32N50B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	150 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
MIXA60WH1200TEH	Littelfuse				195 W	60 A			2.1 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V
IXGT31N60	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	800 ns	800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	15 ns
IXGH32N50BU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	150 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
IXGH30N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
MIXA40WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	195 W	60 A	UNSPECIFIED	POWER CONTROL	2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXGT25N250HV	Littelfuse	N-CHANNEL		YES	250 W	60 A											Insulated Gate BIP Transistors	150 Cel		2500 V		20 V		5 V	MATTE TIN			1					e3	10	260
IXGH25N250	Littelfuse	N-CHANNEL	SINGLE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		409 ns	3	FLANGE MOUNT		150 Cel	SILICON	2500 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260	301 ns
IXGH30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	37 ns
IXGH40N30B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	65 ns
IXGT25N250	Littelfuse	N-CHANNEL	SINGLE	YES		60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		409 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	301 ns
IXGH28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		915 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			66 ns
IXGT32N60C	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	160 ns	110 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	FAST	TO-268AA	e3			25 ns
IXGH32N60C	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		110 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	25 ns
SGL60N90DG3	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V						SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264				320 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.