Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
569 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
54 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
470 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1100 V |
20 V |
6.4 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
59 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
225 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
59 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
220 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
78.7 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
30 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263 |
e3 |
30 |
260 |
33.6 ns |
AEC-Q101 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
429 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
49 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
35 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
75 ns |
270 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
75 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
GULL WING |
RECTANGULAR |
1 |
380 ns |
331 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
53 ns |
|||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
290 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
ULTRA FAST |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
220 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
45 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
225 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
59 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
170 W |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
460 ns |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
258 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
47 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
195 W |
60 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
21 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X21 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1100 ns |
1600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
430 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
GULL WING |
RECTANGULAR |
1 |
1545 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
632 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1285 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
190 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
390 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-247AD |
e3 |
10 |
260 |
75 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
166 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
57 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
25 ns |
|||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
175 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
187 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
382 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-263AB |
e3 |
245 |
50 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
187 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
262 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
50 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
187 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SWITCHING SPEED |
TO-247AC |
e3 |
50 ns |
||||||||||||||||||||
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
GULL WING |
RECTANGULAR |
1 |
380 ns |
331 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
53 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
42.5 ns |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
e3 |
42.5 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
220 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
78.7 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263 |
e3 |
30 |
260 |
33.6 ns |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
125 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
e3 |
41 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
170 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
52 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
60 A |
PLASTIC/EPOXY |
SWITCHING |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
59.2 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
e3 |
40 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
339 W |
60 A |
UNSPECIFIED |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
575 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
25 V |
7.5 V |
MATTE TIN |
SINGLE |
R-XSFM-T3 |
Not Qualified |
e3 |
167 ns |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
480 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2000 ns |
2870 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
62 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
170 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
650 V |
20 V |
7.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
1 |
COLLECTOR |
TO-247AB |
e3 |
52 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
490 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1300 V |
25 V |
7.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
1080 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1500 V |
-55 Cel |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
372 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
83 W |
60 A |
PLASTIC/EPOXY |
SWITCHING |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
166 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
480 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2000 ns |
2870 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
238 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
113 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
40 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
575 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AB |
NOT SPECIFIED |
NOT SPECIFIED |
167 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
250 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
189 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
285 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
90 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
167 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
394 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
443 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1350 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
250 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
260 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
1200 V |
20 V |
6.5 V |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
250 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
6.5 V |
Tin (Sn) |
e3 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.