Onsemi - FGAF30S65AQ

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FGAF30S65AQ by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGAF30S65AQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Collector Current (IC): 60 A; Package Style (Meter): FLANGE MOUNT;
Datasheet FGAF30S65AQ Datasheet
In Stock1,907
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Gate-Emitter Threshold Voltage: 6.6 V
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 166 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 83 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 30 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,907 $1.180 $2,250.260

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