IXYS Corporation - IXGH32N60AU1

IXGH32N60AU1 by IXYS Corporation

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Manufacturer IXYS Corporation
Manufacturer's Part Number IXGH32N60AU1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Nominal Turn Off Time (toff): 400 ns;
Datasheet IXGH32N60AU1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 400 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 200 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 60 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 200 W
Maximum Fall Time (tf): 175 ns
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: FAST
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.9 V
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