Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NGTB30N60FLWG |
| Description | N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 60 A; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel; |
| Datasheet | NGTB30N60FLWG Datasheet |
| In Stock | 1,932 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | NGTB30N60FLWGOS |
| Maximum Collector Current (IC): | 60 A |
| Maximum Power Dissipation (Abs): | 250 W |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |









