64 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGL40N120ANDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		64 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-264AA	e3			45 ns
APT40GP90JDQ2	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		64 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		220 ns	4	FLANGE MOUNT		150 Cel	SILICON	900 V					UPPER	R-XUFM-X4		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	37 ns	UL RECOGNIZED
FGL40N120AND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	64 A	PLASTIC/EPOXY	MOTOR CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	25 V	7.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-264				45 ns
FGL40N120AN	Onsemi	N-CHANNEL	SINGLE	NO	500 W	64 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1	80 ns	165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	25 V	7.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-264AA				45 ns
FGL40N120ANTU	Onsemi	N-CHANNEL	SINGLE	NO		64 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V				MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-264AA	e3			45 ns
FGH40N120AN	Onsemi	N-CHANNEL	SINGLE	NO		64 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		165 ns	3	FLANGE MOUNT			SILICON	1200 V					SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	45 ns
FGH40N120ANTU	Onsemi	N-CHANNEL		NO	417 W	64 A							80 ns				Insulated Gate BIP Transistors	150 Cel		1200 V		25 V	7.5 V	Matte Tin (Sn) - annealed								e3
IKFW60N60EH3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	164 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		282 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			63 ns
IKFW60N60EH3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	164 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		282 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			63 ns
IXGK64N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	226 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	66 ns
IXGX64N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	226 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					66 ns
IXGH64N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	226 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	66 ns
IXGH64N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		777 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	65 ns
IXGT32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGT64N60A3	Littelfuse	N-CHANNEL	SINGLE	YES		64 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		777 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	65 ns
IXGT64N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	GULL WING	RECTANGULAR	1	150 ns	226 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	66 ns
IXGH32N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	42 ns
IXGT32N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGH32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T4		COLLECTOR			TO-247AD	e3	10	260	42 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.