Onsemi - FGH40N120ANTU

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FGH40N120ANTU by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH40N120ANTU
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 64 A; Maximum Gate-Emitter Voltage: 25 V; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
Datasheet FGH40N120ANTU Datasheet
In Stock723
NAME DESCRIPTION
Maximum Collector Current (IC): 64 A
Maximum Power Dissipation (Abs): 417 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Fall Time (tf): 80 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
723 $4.320 $3,123.360

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