8.5 A Insulated Gate Bipolar Transistors (IGBT) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4RC10UDTRLP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

345 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

56 ns

IRG4RC10UTRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

ULTRA FAST

TO-252AA

30

260

32 ns

IRG4RC10UTR

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-252AA

e3

32 ns

IRG4RC10UDTRRP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

345 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

56 ns

IRG4RC10U

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-252AA

e0

30

240

32 ns

IRG4RC10UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

210 ns

345 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

56 ns

IRG4BC10UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8.5 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

345 ns

3

FLANGE MOUNT

38 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

56 ns

IRG4RC10UDTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

345 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

56 ns

IRG4BC10UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

8.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

345 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

56 ns

IRG4RC10UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

345 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e0

30

240

56 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.