IRG4BC10UD by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG4BC10UD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 8.5 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn Off Time (toff): 345 ns;
Datasheet	IRG4BC10UD Datasheet
In Stock	3

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8.5 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	345 ns
No. of Terminals:	3
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	56 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	38 W
Maximum Fall Time (tf):	210 ns
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3	-	-

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