104 W Insulated Gate Bipolar Transistors (IGBT) 14

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
HGTP12N60C3D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	1	275 ns	480 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	RC-IGBT	TO-220AB	e3			48 ns
HGT1S12N60C3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2	COLLECTOR		RC-IGBT	TO-263AB				48 ns
HGT1S12N60C3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2	COLLECTOR		RC-IGBT	TO-263AB				48 ns
STG3P3M25K120	STMicroelectronics	N-CHANNEL	COMPLEX	NO	104 W	50 A	UNSPECIFIED	POWER CONTROL		3.85 V	UNSPECIFIED	RECTANGULAR	6		756 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13	ISOLATED	Not Qualified						57 ns
STG3P3M25N120	STMicroelectronics	N-CHANNEL	COMPLEX	NO	104 W	50 A	UNSPECIFIED	POWER CONTROL		2.75 V	UNSPECIFIED	RECTANGULAR	6			13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X13	ISOLATED	Not Qualified
SKP10N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	104 W	20 A	PLASTIC/EPOXY	POWER CONTROL	25 ns		THROUGH-HOLE	RECTANGULAR	1	76 ns	224 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	40 ns
SKB10N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns		GULL WING	RECTANGULAR	1	76 ns	329 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e0			50 ns
SGW10N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		THROUGH-HOLE	RECTANGULAR	1	59 ns	329 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			50 ns
SKW10N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	104 W	20 A	PLASTIC/EPOXY	POWER CONTROL	25 ns		THROUGH-HOLE	RECTANGULAR	1	76 ns	224 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			40 ns
SKW10N60FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	104 W	20 A	PLASTIC/EPOXY	POWER CONTROL	25 ns		THROUGH-HOLE	RECTANGULAR	1	76 ns	224 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247AC				40 ns
SGB10N60	Infineon Technologies	N-CHANNEL	SINGLE	YES	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		GULL WING	RECTANGULAR	1	59 ns	329 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3			50 ns
SGP10N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	104 W	21 A	PLASTIC/EPOXY	MOTOR CONTROL	32 ns		THROUGH-HOLE	RECTANGULAR	1	59 ns	329 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			50 ns
MUBW35-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO	104 W	38 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	7		220 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN	UPPER	R-XUFM-X25	ISOLATED	Not Qualified	FAST		e3			65 ns
MUBW30-12A6	Littelfuse	N-CHANNEL	COMPLEX	NO	104 W	31 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	7		730 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			MATTE TIN	UPPER	R-XUFM-X25	ISOLATED	Not Qualified	FAST		e3			150 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.