Infineon Technologies - SGB10N60

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SGB10N60 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SGB10N60
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 21 A; Maximum Fall Time (tf): 59 ns;
Datasheet SGB10N60 Datasheet
In Stock756
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 21 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 32 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 329 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 104 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 50 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 59 ns
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage: 20 V
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