1040 W Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBX75N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	110 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	478 ns	3	IN-LINE		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3	COLLECTOR						66 ns
IXBX75N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	200 A	PLASTIC/EPOXY	POWER CONTROL		3.1 V	THROUGH-HOLE	RECTANGULAR	1		840 ns	3	IN-LINE		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3	COLLECTOR						277 ns
CM200TX-24T	Mitsubishi Electric	N-CHANNEL	COMPLEX	NO	1040 W	200 A	PLASTIC/EPOXY	POWER CONTROL	200 ns	1.95 V	UNSPECIFIED	RECTANGULAR	6	500 ns		35	FLANGE MOUNT		150 Cel	SILICON	1200 V	600 ns	-40 Cel	20 V	1000 ns	6.6 V		UPPER	R-PUFM-X10	ISOLATED				NOT SPECIFIED	NOT SPECIFIED		UL RECOGNIZED
IXYB82N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	164 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		285 ns	3	IN-LINE		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR						107 ns
IXBK75N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	200 A	PLASTIC/EPOXY	POWER CONTROL		3.1 V	THROUGH-HOLE	RECTANGULAR	1		840 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		TO-264AA	e1	10	260	277 ns
DF200R12KE3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	295 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	1		830 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	400 ns
FS150R17KE3G	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1040 W	240 A	UNSPECIFIED			2.45 V	UNSPECIFIED	RECTANGULAR	6		1300 ns	29	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V			20 V				UPPER	R-XUFM-X29	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	366 ns
FD200R12KE3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	295 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	1		830 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	400 ns
SP000100741	Infineon Technologies	N-Channel			1040 W	295 A									830 ns				125 Cel	SILICON	1200 V		-40 Cel	20 V						ISOLATED						400 ns
FF200R12KE3	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1040 W	295 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	2		830 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	400 ns
IXBK75N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	110 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	478 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V		-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		TO-264AA	e1	10	260	66 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.