125 W Insulated Gate Bipolar Transistors (IGBT) 107

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGQ25N60Y4	Littelfuse				125 W	25 A				3.5 V			1					Insulated Gate BIP Transistors	150 Cel		600 V			20 V
FII30-12D	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	125 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	2		570 ns	5	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			175 ns
FID35-06C	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	38 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		390 ns	5	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			80 ns
IXYP8N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		238 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				39 ns
IXYP8N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		238 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				39 ns
FII40-06D	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	125 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	THROUGH-HOLE	RECTANGULAR	2		310 ns	5	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			TIN SILVER COPPER	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			100 ns
LGD8201ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.9 V	GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							6500 ns	AEC-Q101
IXA20RG1200DHGLB-TRR	Littelfuse	N-CHANNEL		YES	125 W	32 A												Insulated Gate BIP Transistors	150 Cel		1200 V			20 V		6.5 V
IXYA8N90C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		238 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V		-55 Cel	20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	39 ns
LGD8205ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE		175 Cel	SILICON	390 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							7500 ns	AEC-Q101
LGD8201TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE		175 Cel	SILICON	440 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							7500 ns	AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.