130 W Insulated Gate Bipolar Transistors (IGBT) 29

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
ISL9V2040D3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	2780 ns
IKFW50N60DH3EXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			58 ns
IKP15N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	30 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		291 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e3			32 ns
ISL9V2040D3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				2780 ns
ISL9V2040S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2780 ns
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	1.9 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
ISL9V2040P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	THROUGH-HOLE	RECTANGULAR	1		6000 ns	3	FLANGE MOUNT			175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				2780 ns
ISL9V2040S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2.3 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	390 V	-40 Cel	12 V	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2780 ns
STGB19NC60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	130 W	40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		272 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	245	32 ns
STGP19NC60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	130 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		272 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	32 ns
STGB19NC60WT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	130 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		204 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245	33 ns
IGB15N60T	Infineon Technologies	N-CHANNEL	SINGLE	YES	130 W	30 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		291 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3		245	32 ns
SP000683064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	26 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1		238 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				28 ns
FP15R12W1T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	130 W	28 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	7		495 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns
FP15R12W1T4_B3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	130 W	28 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	6		495 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X21		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	120 ns
IKFW50N60DH3E	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			58 ns
IGP15N60T	Infineon Technologies	N-CHANNEL	SINGLE	NO	130 W	30 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		291 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e3			32 ns
IKB15N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	30 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		291 ns	3	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V	5.7 V		SINGLE	R-PSSO-G3	1	COLLECTOR	Not Qualified	HIGH SWITCHING SPEED	TO-263AB			245	32 ns
FP15R12W1T4_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	130 W	28 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	7		495 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified					260	120 ns
IKP28N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	38 A	PLASTIC/EPOXY	POWER CONTROL	1.9 V	THROUGH-HOLE	RECTANGULAR	1		236 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			54 ns
GT50G321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	400 ns	540 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V		25 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	430 ns
GT20J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	20 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	300 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	130 W	150 Cel	SILICON	600 V		20 V	8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	240	400 ns
GT50J322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	400 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0			300 ns
GT20J101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	130 W	20 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
MUBW35-06A6K	Littelfuse	N-CHANNEL	COMPLEX	NO	130 W	42 A	UNSPECIFIED	POWER CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	7		310 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		MATTE TIN	UPPER	R-XUFM-X21		ISOLATED	Not Qualified			e3			100 ns	UL RECOGNIZED
VII25-12P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	130 W	30 A	UNSPECIFIED	MOTOR CONTROL	3.3 V	UNSPECIFIED	RECTANGULAR	2		570 ns	9	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X9		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	175 ns
VII50-06P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	130 W	42.5 A	UNSPECIFIED	MOTOR CONTROL	2.9 V	UNSPECIFIED	RECTANGULAR	2		310 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		GOLD OVER NICKEL	UPPER	R-XUFM-X12		ISOLATED	Not Qualified			e4			100 ns
VID25-12P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	130 W	30 A	UNSPECIFIED	MOTOR CONTROL	3.3 V	UNSPECIFIED	RECTANGULAR	1		570 ns	10	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X10		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	175 ns
IXA20PG1200DHGLB	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	130 W	32 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	2		350 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		Nickel (39) Tin (984)	DUAL	R-PDSO-G9		ISOLATED		HIGH RELIABILITY					110 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.