ISL9V2040S3S by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	ISL9V2040S3S
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSSO-G2;
Datasheet	ISL9V2040S3S Datasheet
In Stock	2,127

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	10 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	6000 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	130 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	2780 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	390 V
Maximum Gate-Emitter Voltage:	12 V
Maximum VCEsat:	2.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,127	-	-

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