160 W Insulated Gate Bipolar Transistors (IGBT) 55

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGR32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	47 A	PLASTIC/EPOXY	POWER CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	IN-LINE		150 Cel	SILICON	900 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED				e1	10	260	42 ns	UL RECOGNIZED
IXXP12N65B4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	38 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		245 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB				44 ns
IXGF36N300	Littelfuse	N-CHANNEL	SINGLE	NO	160 W	36 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		THROUGH-HOLE	RECTANGULAR	1		755 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V		20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED	Not Qualified			e1			221 ns	UL RECOGNIZED
IXYP10N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	160 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB				46 ns
IXYP10N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		128 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB				44 ns
IXYP10N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	160 W	32 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		263 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB				54 ns
SGP40N60UF	Samsung	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	280 ns	118 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7.5 V		SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220				32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.