IXGR32N90B2D1 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXGR32N90B2D1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 47 A; Terminal Finish: TIN SILVER COPPER;
Datasheet	IXGR32N90B2D1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	47 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5 V
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
Nominal Turn Off Time (toff):	410 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	160 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	42 ns
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	900 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL RECOGNIZED
Peak Reflow Temperature (C):	260
Maximum VCEsat:	2.9 V

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