190 W Insulated Gate Bipolar Transistors (IGBT) 27

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGH16N170A	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	150 ns	330 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	97 ns
IXGH16N170	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1100 ns	1600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA	e3	10	260	90 ns
IXGT16N170A	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	150 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	97 ns
IXGT16N170AH1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	190 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	150 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	97 ns
IXGT16N170	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	32 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR	Not Qualified		TO-247AD	e3	10	260	90 ns
STGW30NB60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	190 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3			90 ns
STGW30NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3	1		Not Qualified		TO-247	e3			50 ns
IKWH30N65WR5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		416 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V		4.8 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	61 ns
DF80R12W2H3B11BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	190 W	50 A	UNSPECIFIED	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	2		600 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
DF80R12W2H3_B11	Infineon Technologies	N-Channel	COMPLEX	NO	190 W	50 A	UNSPECIFIED	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	2		600 ns	22	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
FP25R12U1T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	190 W	39 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	7		520 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified					260	47 ns
IKWH30N65WR5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		416 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V		4.8 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	61 ns
FS50R07N2E4BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	190 W	70 A	UNSPECIFIED	POWER CONTROL	1.95 V	UNSPECIFIED	RECTANGULAR	6		265 ns	28	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X28		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns	UL APPROVED
FS50R07N2E4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	190 W	70 A	UNSPECIFIED	POWER CONTROL	1.95 V	UNSPECIFIED	RECTANGULAR	6		265 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V	-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X28		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns	UL APPROVED
FP50R06KE3G	Infineon Technologies	N-CHANNEL	COMPLEX	NO	190 W	60 A	UNSPECIFIED		1.9 V	UNSPECIFIED	RECTANGULAR	7		760 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
FS50R06KE3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	190 W	70 A	UNSPECIFIED		1.9 V	UNSPECIFIED	RECTANGULAR	6		265 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X28		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	43 ns
IKW25T120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		790 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified		TO-247AC	e3			82 ns
FP50R07N2E4_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	190 W	70 A	UNSPECIFIED	POWER CONTROL	1.95 V	UNSPECIFIED	RECTANGULAR	7		265 ns	31	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V		20 V				UPPER	R-XUFM-X31		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	43 ns
IGW25T120	Infineon Technologies	N-CHANNEL	SINGLE	NO	190 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		790 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			82 ns
FP50R06KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	190 W	60 A	UNSPECIFIED		1.9 V	UNSPECIFIED	RECTANGULAR	7		760 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
GT60M322	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	210 ns	390 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	950 V		25 V			TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0			620 ns
IXGQ20N120B	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3			43 ns
IXGQ20N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified			e3			43 ns
IXGA28N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	GULL WING	RECTANGULAR	1		870 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	46 ns
IXGP28N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				46 ns
IXGH28N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	66 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	43 ns
IXGH28N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	190 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.4 V	THROUGH-HOLE	RECTANGULAR	1		870 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD				46 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.