Infineon Technologies - FP50R07N2E4_B11

FP50R07N2E4_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP50R07N2E4_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 70 A; Maximum Operating Temperature: 175 Cel;
Datasheet FP50R07N2E4_B11 Datasheet
In Stock619
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 70 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 265 ns
No. of Terminals: 31
Maximum Power Dissipation (Abs): 190 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 43 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X31
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.95 V
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Pricing (USD)

Qty. Unit Price Ext. Price
619 $64.520 $39,937.880

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