192 W Insulated Gate Bipolar Transistors (IGBT) 10

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
NGTB30N120IHSWG	Onsemi	N-CHANNEL		NO	192 W	60 A											Insulated Gate BIP Transistors	150 Cel		1200 V		20 V		6.5 V	TIN						e3
NGTB20N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3
NGTB25N120FLWG	Onsemi	N-CHANNEL		NO	192 W	50 A											Insulated Gate BIP Transistors	150 Cel		1200 V		20 V		6.5 V	TIN						e3
NGTB25N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3			117 ns
NGTB20N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3			110 ns
NGTB25N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247	e3
IRGP6630D-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	47 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
IRGP6630DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	47 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	TO-247AC		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGT15N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	192 W	30 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	GULL WING	RECTANGULAR	1	255 ns	302 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	495 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-268AA	e3	10	260	40 ns
IXGH15N120B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	30 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	THROUGH-HOLE	RECTANGULAR	1	255 ns	302 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	495 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	TO-247AD	e3	10	260	40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.