Onsemi - NGTB25N120FLWG

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NGTB25N120FLWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB25N120FLWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 192 W; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Voltage: 20 V; JESD-609 Code: e3;
Datasheet NGTB25N120FLWG Datasheet
In Stock1,856
NAME DESCRIPTION
Other Names: NGTB25N120FLWG-ND
NGTB25N120FLWGOS
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 192 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,856 $2.650 $4,918.400

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