270 W Insulated Gate Bipolar Transistors (IGBT) 36

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IGB50N65S5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1	215 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			51 ns
IXXH30N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1	292 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD	e3	10	260	57 ns
FS50R12KE3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	270 W	75 A	UNSPECIFIED		2.2 V	UNSPECIFIED	RECTANGULAR	6	610 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X28		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	140 ns
IXYH30N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD	e3	10	260	59 ns
IXXH30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1	166 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD	e3	10	260	57 ns
STGW45NC60VD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	90 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	366 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified	TO-247		NOT SPECIFIED	NOT SPECIFIED	46 ns
AIKW50N65DF5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
IHW40T120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-247AC		NOT SPECIFIED	NOT SPECIFIED	92 ns
GB50N65H5	Infineon Technologies	N-CHANNEL	SINGLE	YES	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	223 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB		NOT SPECIFIED	NOT SPECIFIED	52 ns
AIGW50N65H5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	213 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			33 ns	AEC-Q101
AIGW50N65H5	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	213 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			33 ns	AEC-Q101
AIKW50N65DH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
AIKW50N65DF5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
AIGW50N65F5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
AIKW50N65DH5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
AIGW50N65F5	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3			35 ns	AEC-Q101
IGW50N65H5A	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	213 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				33 ns	AEC-Q101
IKW50N65F5A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				35 ns	AEC-Q101
IGW50N65F5A	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				35 ns	AEC-Q101
IGB50N65H5	Infineon Technologies	N-CHANNEL	SINGLE	YES	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	223 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			52 ns
IKW40T120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-247AC	e3			92 ns
IGB50N65H5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	223 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			52 ns
IGB50N65S5	Infineon Technologies	N-CHANNEL	SINGLE	YES	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1	215 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			51 ns
IGW50N65F5AXKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
IKW50N65F5AXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
FP50R12KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	270 W	75 A	UNSPECIFIED		2.15 V	UNSPECIFIED	RECTANGULAR	7	610 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	135 ns
IGW50N65H5AXKSA1	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	213 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247		NOT SPECIFIED	NOT SPECIFIED	33 ns	AEC-Q101
IGW40T120	Infineon Technologies	N-CHANNEL	SINGLE	NO	270 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	TO-247AD	e3			92 ns
MWI50-12T7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	270 W	80 A	UNSPECIFIED	POWER CONTROL	2.15 V	UNSPECIFIED	RECTANGULAR	6	610 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X21		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	140 ns	UL RECOGNIZED
IXYQ30N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	70 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	199 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR						57 ns
IXYT30N65C3H1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	120 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-268AA	e3	10	260	59 ns
IXYP30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				59 ns
IXXH30N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1	292 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD	e3	10	260	57 ns
IXXH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1	166 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD				57 ns
IXYH30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	120 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD	e3	10	260	59 ns
IXYH30N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	270 W	70 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	199 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD				57 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.