310 W Insulated Gate Bipolar Transistors (IGBT) 21

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXYH16N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD				35 ns
STGWA45HF60WDI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified	TO-247	e3
BUP304	Infineon Technologies	N-CHANNEL		NO	310 W	35 A			200 ns					300 ns				Insulated Gate BIP Transistors	150 Cel		1000 V		20 V	6.5 V	Tin/Lead (Sn/Pb)							e0
IHY20N135R3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		505 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1350 V		20 V	6.4 V		SINGLE	R-PSFM-T3			Not Qualified	TO-247		NOT SPECIFIED	NOT SPECIFIED
BUP307	Infineon Technologies	N-CHANNEL		NO	310 W	35 A			200 ns					300 ns				Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	6.5 V	Tin/Lead (Sn/Pb)							e0
BUP309	Infineon Technologies	N-CHANNEL		NO	310 W									80 ns				Insulated Gate BIP Transistors	150 Cel		1700 V		20 V	6.5 V	Tin/Lead (Sn/Pb)							e0
BSM35GB120DLC	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	310 W	75 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	2		370 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V		MATTE TIN	UPPER	R-XUFM-X7		ISOLATED	Not Qualified		e3			110 ns
IHY20N120R3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		538 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V	6.4 V		SINGLE	R-PSFM-T3			Not Qualified	TO-247			260
IHW20N135R3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		385 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1350 V		25 V	6.4 V	MATTE TIN	SINGLE	R-PSFM-T3				TO-247	e3			505 ns
IHW20N120R3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		538 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V	6.4 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	TO-247	e3
BSM75GP60	Infineon Technologies	N-CHANNEL	COMPLEX	NO	310 W	100 A	UNSPECIFIED	POWER CONTROL		2.45 V	UNSPECIFIED	RECTANGULAR	7		400 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X24		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	140 ns
IHW20N135R3FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		385 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1350 V		25 V	6.4 V	TIN	SINGLE	R-PSFM-T3				TO-247	e3			505 ns
IXGN80N30BD1	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	120 A	UNSPECIFIED	MOTOR CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	1		400 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified					112 ns
IXYA12N250CHV	Littelfuse	N-CHANNEL	SINGLE	YES	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	GULL WING	RECTANGULAR	1		333 ns	2	SMALL OUTLINE		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3	10	260	32 ns
IXYT12N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	GULL WING	RECTANGULAR	1		303 ns	2	SMALL OUTLINE		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-268AA				28 ns
IXGH60N50A	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					500 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V	5 V	Tin/Lead (Sn/Pb)							e0
IXYH16N170C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD				35 ns
IXYH12N250C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	THROUGH-HOLE	RECTANGULAR	1		303 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247AD				28 ns
IXYH12N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	THROUGH-HOLE	RECTANGULAR	1		333 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				32 ns
IXGH60N50	Littelfuse	N-CHANNEL		NO	310 W	75 A			200 ns					2000 ns				Insulated Gate BIP Transistors	150 Cel		500 V		20 V	5 V	Tin/Lead (Sn/Pb)							e0
IXYH12N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	THROUGH-HOLE	RECTANGULAR	1		333 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				32 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.