Infineon Technologies - IHY20N120R3

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IHY20N120R3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHY20N120R3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
Datasheet IHY20N120R3 Datasheet
In Stock881
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
JEDEC-95 Code: TO-247
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 538 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 310 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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