32 W Insulated Gate Bipolar Transistors (IGBT) 10

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGT2N250	Littelfuse	N-CHANNEL	SINGLE	YES	32 W	5.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		278 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	115 ns
IXGH2N250	Littelfuse	N-CHANNEL	SINGLE	NO	32 W	5.5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		278 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V		20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AD	e3	10	260	115 ns
IXBT2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	310 ns
STGF19NC60WD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		127 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				25 ns
STGF17NC60SD	STMicroelectronics	N-CHANNEL		NO	32 W	17 A												Insulated Gate BIP Transistors	150 Cel		600 V		20 V	6.2 V	Matte Tin (Sn) - annealed								e3
STGF19NC60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	17 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		535 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.2 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	23.5 ns
STGF19NC60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	16 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		270 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	38 ns
IRGIB6B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	11 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		THROUGH-HOLE	RECTANGULAR	1	27 ns	258 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	45 ns
SKA06N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	9 A	PLASTIC/EPOXY	MOTOR CONTROL	22 ns		THROUGH-HOLE	RECTANGULAR	1	84 ns	318 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			41 ns
IXBH2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		252 ns	3	FLANGE MOUNT		150 Cel	SILICON	2500 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247	e3	10	260	310 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.