STMicroelectronics - STGF17NC60SD

  1. Home
  2. STMicroelectronics - STGF17NC60SD
STGF17NC60SD by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STGF17NC60SD
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Collector Current (IC): 17 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 6.2 V;
Datasheet STGF17NC60SD Datasheet
In Stock4,634
NAME DESCRIPTION
Maximum Collector Current (IC): 17 A
Maximum Power Dissipation (Abs): 32 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6.2 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,634 $3.260 $15,106.840

Popular Products

Category Top Products

IKW75N60T by Infineon Technologies

IKW75N60T

Infineon Technologies

IKW75N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a power dissipation of 428W and turn-off time of 401ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities.
SGL50N60RUFDTU by Onsemi

SGL50N60RUFDTU

Onsemi

SGL50N60RUFDTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 80A. It is designed for MOTOR CONTROL applications, featuring a single configuration with built-in diode. With a package style of FLANGE MOUNT and terminal form THROUGH-HOLE, it offers fast switching times with turn-off time of 329ns and fall time of 160ns.
ISL9V5036P3-F085 by Onsemi

ISL9V5036P3-F085

Onsemi

ISL9V5036P3-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Collector Current of 46A. It is designed for POWER CONTROL applications, featuring a built-in diode and resistor in a RECTANGULAR package style. With a Max Power Dissipation of 250W, it operates at temperatures up to 175°C efficiently.
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
BSM150GB120DN2 by Siemens

BSM150GB120DN2

Siemens

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 210 A; Nominal Turn Off Time (toff): 600 ns; No. of Elements: 2;
IRG4BC20WPBF by International Rectifier

IRG4BC20WPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Transistor Application: MOTOR CONTROL;
F4-75R06W1E3 by Infineon Technologies

F4-75R06W1E3

Infineon Technologies

F4-75R06W1E3 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 275W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 45ns and low toff of 330ns. The COMPLEX configuration and RECTANGULAR package make it suitable for high-power systems requiring efficient switching capabilities.
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.
IRGP35B60PDPBF by International Rectifier

IRGP35B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
IRG4PC30KPBF by International Rectifier

IRG4PC30KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; No. of Terminals: 3;
IKW40N120H3 by Infineon Technologies

IKW40N120H3

Infineon Technologies

IKW40N120H3 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 483W Ptot. It features a built-in diode for power control applications. With a turn-off time of 414ns and turn-on time of 78ns, it operates at up to 175°C temperature.
AUIRGP4066D1-E by International Rectifier

AUIRGP4066D1-E

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Transistor Application: POWER CONTROL;
SK15DGDL126ET by Semikron International

SK15DGDL126ET

Semikron International

SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.
APT85GR120J by Microchip Technology

APT85GR120J

Microchip Technology

APT85GR120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn-off time of 445ns and a built-in diode in a rectangular package style.
APT50GP60J by Microsemi

APT50GP60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
FGH40T120SMD by Micross Components

FGH40T120SMD

Micross Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 80 A; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD;
IXXX160N65C4 by IXYS Corporation

IXXX160N65C4

IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
IRG4IBC20KDPBF by International Rectifier

IRG4IBC20KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel;
IRGP50B60PDPBF by Infineon Technologies

IRGP50B60PDPBF

Infineon Technologies

IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
FGH40N60SMDF by Fairchild Semiconductor

FGH40N60SMDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;