320 W Insulated Gate Bipolar Transistors (IGBT) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG7PH42UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

85 A

PLASTIC/EPOXY

POWER CONTROL

41 ns

THROUGH-HOLE

RECTANGULAR

1

86 ns

444 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

51 ns

IRG7PH42UD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

85 A

PLASTIC/EPOXY

POWER CONTROL

41 ns

THROUGH-HOLE

RECTANGULAR

1

86 ns

444 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

51 ns

IRG7PH44K10D-EPBF

Infineon Technologies

N-CHANNEL

NO

320 W

70 A

70 ns

115 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

IRG7PG42UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

444 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

-55 Cel

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

51 ns

IRG7PH44K10DPBF

Infineon Technologies

N-CHANNEL

NO

320 W

70 A

70 ns

115 ns

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

7.5 V

IRG7PG42UD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

444 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

-55 Cel

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

51 ns

MG150J7KS50

Toshiba

N-CHANNEL

COMPLEX

NO

320 W

150 A

PLASTIC/EPOXY

MOTOR CONTROL

300 ns

2.8 V

UNSPECIFIED

RECTANGULAR

7

500 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

320 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

UPPER

R-PUFM-X22

ISOLATED

Not Qualified

HIGH SPEED

e0

RJH1CV7DPK-00#T0

Renesas Electronics

N-CHANNEL

NO

320 W

70 A

Insulated Gate BIP Transistors

150 Cel

1200 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MUBW75-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

320 W

100 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

6

490 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

210 ns

UL RECOGNIZED

MMIX1Y82N120C3H1

Littelfuse

N-CHANNEL

YES

320 W

78 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.