35 W Insulated Gate Bipolar Transistors (IGBT) 24

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Fall Time (tf)	Maximum Drain Current (Abs) (ID)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IRGR2B60KDPBF	Infineon Technologies	N-CHANNEL		YES	35 W	6.3 A			25 ns						75 ns					Insulated Gate BIP Transistors			150 Cel		600 V	20 V	6 V					1
SGS10N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR		1	220 ns		284 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	8 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			49 ns
IRGR2B60KDTRLPBF	Infineon Technologies	N-CHANNEL		YES	35 W	6.3 A			25 ns						75 ns					Insulated Gate BIP Transistors			150 Cel		600 V	20 V	6 V					1
IRGR2B60KDTRPBF	Infineon Technologies	N-CHANNEL		YES	35 W	6.3 A			25 ns						75 ns					Insulated Gate BIP Transistors			150 Cel		600 V	20 V	6 V					1
STHI10N50FI	STMicroelectronics	N-CHANNEL	SINGLE	NO	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		10 A	1300 ns	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	500 V			TIN LEAD	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0			800 ns
STHI07N50FI	STMicroelectronics	N-CHANNEL	SINGLE	NO	35 W	7 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		7 A	1300 ns	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	500 V			TIN LEAD	7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0			800 ns
STGP3NB60HDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR		1			168 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			16 ns
STGP7NB60HDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR		1			220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN		SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3			63 ns
STGD3NB60K	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR		1			220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	7 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			19 ns
STGF19NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	16 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR		1			272 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5.75 V	MATTE TIN		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			32 ns
STGD3NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			25 ns
STGD3NB60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e3			46 ns
STGD3NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	7 V	MATTE TIN		SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			46 ns
STGD3NB60H	STMicroelectronics	N-CHANNEL	SINGLE	YES	35 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR		1			168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V	5 V	MATTE TIN		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252AA	e3			46 ns
OM6508SA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE		1				3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	500 V		4 V	TIN LEAD		SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
OM6508CSA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE		1			1160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	500 V		4 V	TIN LEAD		SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
OM6501ST	Infineon Technologies	N-CHANNEL	SINGLE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE		1				3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	500 V		4 V	TIN LEAD		SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-257AA	e0			187 ns
SGW02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	35 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	21 ns		THROUGH-HOLE	RECTANGULAR		1	102 ns		375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	1200 V	20 V	5 V	MATTE TIN		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			40 ns
BSM10GD60DN2	Infineon Technologies				35 W	10 A				2.7 V				1						Insulated Gate BIP Transistors			125 Cel		600 V	20 V
IRGR2B60KDTRRPBF	Infineon Technologies	N-CHANNEL		YES	35 W	6.3 A			25 ns						75 ns					Insulated Gate BIP Transistors			150 Cel		600 V	20 V	6 V					1
GT15J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR		1	300 ns		500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	20 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	400 ns
GT15J102	Toshiba	N-CHANNEL	SINGLE	NO	35 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR		1	350 ns		500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		35 W	150 Cel	SILICON	600 V	20 V	6 V	Tin/Lead (Sn/Pb)		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED		e0			400 ns
RJP60D0DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	35 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR		1			160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	30 V				SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55 ns
RJP60D0DPP-M0#T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	35 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR		1			160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors			150 Cel	SILICON	600 V	30 V				SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	55 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.