357 W Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXBT42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	357 W	42 A	PLASTIC/EPOXY	POWER CONTROL	6 V	GULL WING	RECTANGULAR	1	308 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	33 ns
IXBH42N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	42 A	PLASTIC/EPOXY	POWER CONTROL	6 V	THROUGH-HOLE	RECTANGULAR	1	308 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	33 ns
STGW75H65DFB2-4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	115 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	231 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	7 V		SINGLE	R-PSFM-T4		COLLECTOR			TO-247				42 ns
NGTB15N135IHRWG	Onsemi	N-CHANNEL		NO	357 W	30 A										Insulated Gate BIP Transistors	175 Cel		1350 V		20 V	6.5 V	Matte Tin (Sn) - annealed								e3
NGTB30N140IHR3WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	60 A	PLASTIC/EPOXY	POWER AMPLIFIER	1.95 V	THROUGH-HOLE	RECTANGULAR	1	423 ns	3	FLANGE MOUNT		175 Cel	SILICON	1400 V	-40 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-247	e3
STGWA75H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	115 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	210 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				44 ns
IHW20N120R	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	30 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	685 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V	6.4 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			92 ns
IKW40N120CS7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	82 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	290 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V		SINGLE	R-PSFM-T3					TO-247				48 ns
IHW15N120R2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	30 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	432 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V	6.4 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED
DGTD120T40S1PT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1	387 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3					TO-247	e3		260	132 ns
IXBF55N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	86 A	PLASTIC/EPOXY	POWER CONTROL	3.2 V	THROUGH-HOLE	RECTANGULAR	1	475 ns	3	IN-LINE		150 Cel	SILICON	3000 V	-55 Cel	25 V	5 V		SINGLE	R-PSIP-T3		ISOLATED							637 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.