Onsemi - NGTB30N140IHR3WG

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NGTB30N140IHR3WG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB30N140IHR3WG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 60 A; Terminal Form: THROUGH-HOLE;
Datasheet NGTB30N140IHR3WG Datasheet
In Stock1,622
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER AMPLIFIER
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 423 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 357 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1400 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.95 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,622 $5.000 $8,110.000

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