378 W Insulated Gate Bipolar Transistors (IGBT) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH60N60SFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	62 ns	187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	66 ns
FGH60N60SFTU	Onsemi	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	62 ns	187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AB	e3			66 ns
FGH60N60SFDTU_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1	62 ns	166 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.6 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR		RC-IGBT	TO-247	e3			76 ns	AEC-Q101
FGH60N60SFDTU-F085	Onsemi	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1	62 ns	166 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.6 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR		RC-IGBT	TO-247	e3			76 ns	AEC-Q101
APT60GT60JRD	Microchip Technology				378 W	60 A						1					Insulated Gate BIP Transistors	150 Cel		600 V		20 V
RJH65S04DPQ-A0	Renesas Electronics	N-CHANNEL		NO	378 W	100 A											Insulated Gate BIP Transistors	150 Cel		650 V		30 V	6.8 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.