Renesas Electronics - RJH65S04DPQ-A0

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RJH65S04DPQ-A0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJH65S04DPQ-A0
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 650 V;
Datasheet RJH65S04DPQ-A0 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 378 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Threshold Voltage: 6.8 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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