38 W Insulated Gate Bipolar Transistors (IGBT) 16

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGD3HF60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		5.75 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252	e3	30	260
IRG4RC10SDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3	30	260	106 ns
IRG4BC10SD-SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	GULL WING	RECTANGULAR	1	1080 ns	1535 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	2280 ns	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	108 ns
STGF30M65DF2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		310 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	47 ns
STGP3HF60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	7.5 A	PLASTIC/EPOXY	POWER CONTROL	2.95 V	THROUGH-HOLE	RECTANGULAR	1		140 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.75 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	15 ns
STGB3HF60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	7.5 A	PLASTIC/EPOXY	POWER CONTROL	2.95 V	GULL WING	RECTANGULAR	1		140 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.75 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	15 ns
IRG4RC10SDTRRP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3	30	260	106 ns
IRG4RC10KDTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	9 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	210 ns	410 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST SOFT RECOVERY	TO-252AA	e3			78 ns
IRG4BC10KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	9 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	210 ns	410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	78 ns
IRG4RC10SDTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3	30	260	106 ns
IRG4BC10SD-STRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V				6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3			106 ns
IRG4BC10SD-LPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	1080 ns	1535 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V	2280 ns	6 V		SINGLE	R-PSIP-T3		COLLECTOR							108 ns
IRG4RC10UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	8.5 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	210 ns	345 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA	e3	30	260	56 ns
IRG4BC10SD-STRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	1080 ns	1780 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V				6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e3			106 ns
IRG4BC10UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	8.5 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	210 ns	345 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	56 ns
MUBW6-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO	38 W	7 A	UNSPECIFIED	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	7		360 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.