Infineon Technologies - IRG4RC10KDTRPBF

IRG4RC10KDTRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG4RC10KDTRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 9 A; JESD-609 Code: e3;
Datasheet IRG4RC10KDTRPBF Datasheet
In Stock302
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 9 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
Nominal Turn Off Time (toff): 410 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 38 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 78 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 210 ns
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: ULTRA FAST SOFT RECOVERY
Maximum Gate-Emitter Voltage: 20 V
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Pricing (USD)

Qty. Unit Price Ext. Price
302 $0.975 $294.450

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