428 W Insulated Gate Bipolar Transistors (IGBT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

AIKW75N60CTXKSA1

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

AEC-Q101

FGH25T120SMD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

584 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

7.5 V

TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

RC-IGBT

TO-247AB

e3

88 ns

FGH25T120SMD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

584 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

25 V

7.5 V

TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247AB

e3

88 ns

IKW75N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-247AD

e3

10

260

69 ns

FGH12040WD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

8 V

SINGLE

R-PSFM-T3

TO-247

116 ns

AIKW75N60CT

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

365 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

AEC-Q101

IGW75N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

428 W

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

69 ns

IHW30N90T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

691 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

900 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

82 ns

IKW50N120CS7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

82 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

SINGLE

R-PSFM-T3

TO-247

48 ns

IKW50N120CS7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

82 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

SINGLE

R-PSFM-T3

TO-247

48 ns

IKW75N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

69 ns

AEC-Q101

IKW75N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

DGTD65T60S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

HIGH SPEED SWITCHING

TO-247

e3

260

83 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.