Infineon Technologies - IKW75N60H3

IKW75N60H3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKW75N60H3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 428 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
Datasheet IKW75N60H3 Datasheet
In Stock655
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.7 V
JEDEC-95 Code: TO-247
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Maximum Power Dissipation (Abs): 428 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: COLLECTOR
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Pricing (USD)

Qty. Unit Price Ext. Price
655 $2.480 $1,624.400

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