450 W Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXDN55N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	450 W	100 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		570 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	NICKEL	UPPER	R-XUFM-X4	ISOLATED	Not Qualified					170 ns	UL RECOGNIZED
SKM100GB063D	Semikron International	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	450 W	130 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		335 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			TIN SILVER	UPPER	R-XUFM-X7	ISOLATED	Not Qualified		e2			90 ns	UL RECOGNIZED
MG150J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	450 W	150 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	450 W	150 Cel	SILICON	600 V		20 V		6 V		UPPER	R-XUFM-X3	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	400 ns
MG100J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	450 W	100 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	450 W	150 Cel	SILICON	600 V		20 V		8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				400 ns
IRGP4266PBF	Infineon Technologies	N-CHANNEL		NO	450 W	140 A			105 ns					55 ns				Insulated Gate BIP Transistors		175 Cel		650 V		20 V		7.7 V								NOT SPECIFIED	NOT SPECIFIED
IRGP4266-EPBF	Infineon Technologies	N-CHANNEL		NO	450 W	140 A			105 ns					55 ns				Insulated Gate BIP Transistors		175 Cel		650 V		20 V		7.7 V								NOT SPECIFIED	NOT SPECIFIED
MG100J6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	450 W	100 A	UNSPECIFIED	MOTOR CONTROL	240 ns	2.7 V	UNSPECIFIED	RECTANGULAR	6	300 ns	200 ns	19	FLANGE MOUNT	Insulated Gate BIP Transistors	450 W	150 Cel	SILICON	600 V	160 ns	20 V	400 ns	8 V		UPPER	R-XUFM-X19	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	80 ns
MBB75GS12AW	Renesas Electronics				450 W	75 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MBM150GS6AW	Renesas Electronics	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	450 W	150 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED, LOW NOISE				300 ns
MBM75GS12AW	Renesas Electronics				450 W	75 A				3.4 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
MUBW75-17T8	Littelfuse	N-CHANNEL	COMPLEX	NO	450 W	113 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	7		1350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1700 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24	ISOLATED	Not Qualified		e3			360 ns	UL RECOGNIZED
IXDN55N120	Littelfuse	N-CHANNEL	SINGLE	NO	450 W	100 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1		570 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	NICKEL	UPPER	R-XUFM-X4	ISOLATED	Not Qualified					170 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.